Name:	Charles P. Ho, M.D., Ph.D.
Affiliation:	National Orthopedic Imaging Associates
Title:	Medical Director

Dr. Ho joined the National Orthopedic Imaging Associates (NOIA) in 1990. He is Co-Medical Director of imaging centers located in California, Washington, and Colorado. Dr. Ho has served as Regional Medical Advisor to the USA/VISA Decathlon Team and currently serves on the Medical Advisory Board of the Steadman Hawkins Sports Medicine Foundation. He and the other NOIA doctors are radiologic consultants to a number of high-profile sports organizations, including the San Francisco 49ers, San Francisco Giants, US Ski Team, Cleveland Indians and the Denver Broncos.

BS, MS (Electrical Engineering), Massachusetts Institute of Technology, Cambridge, MA, 1975
PhD (Electrical Engineering), Stanford University, Stanford, CA, 1979
MD, Stanford University School of Medicine, Stanford, CA, 1984

Charles P. Ho, PhD, MD
Medical Director
National Orthopedic Imaging Associates
California Advanced Imaging - Atherton
3301 El Camino Real, Suite 100
Atherton, CA 94027
Phone: (650) 364-3080 x270 or x245
Fax: (650) 364-2004
Email: cho@immixmgt.com
www.orthoimaging.com

Chang H, Ho CP. Bubble-lattice propagation by conforming periodic permalloy patterns. Appl Phys Lett February, 1976; 28:166-168.

Ho CP, Chang H. Field-access bubble-lattice propagation devices. IEEE Trans Magnetics March, 1977; MAG-13:945-952.

Deal BE, Hess DW, Plummer JD, Ho CP. Kinetics of the thermal oxidation of silicon in 02H20 and 02C12 mixtures. J Electrochem Soc February, 1978;125:339-346.

Ho CP, Plummer JD, Deal BE, Meindl JD. Thermal oxidation of heavily phosphorus-doped silicon. J Electrochem Soc April, 1978;125:665-671.

Ho CP, Plummer JD. Improved MOS device performance through the enhanced oxidation of heavily doped N+ silicon. IEEE Trans Electron Devices Special Issue onVLSI April, 1979; ED-26:623-630.

Ho CP, Plummer, JD. Si/Si02 Interface oxidation kinetics: A physical model for the influence of high substrate doping levels. I. Theory. J Electrochem Soc September, 1979;126:1516-1522.

Ho CP, Plummer JD. Si/Si02 Interface oxidation kinetics: A physical model for the influence of high substrate doping levels. II. Comparison with experiment and discussion. J Electrochem Soc September, 1979, 125:1523-1530.